 | | | |
| PartNumber | BSR92P | BSR92P-L6327 | BSR92P L6327 |
| Description | IGBT Transistors MOSFET P-Ch -250V 140mA SOT-23-3 | ||
| Manufacturer | - | - | INFINEON |
| Product Category | - | - | IC Chips |
| Series | - | - | BSR92 |
| Packaging | - | - | Reel |
| Part Aliases | - | - | BSR92PL6327HTSA1 BSR92PL6327XT SP000265408 |
| Unit Weight | - | - | 0.050717 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | SOT-23-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 P-Channel |
| Pd Power Dissipation | - | - | 500 mW |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 6.3 ns |
| Rise Time | - | - | 6.3 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 140 mA |
| Vds Drain Source Breakdown Voltage | - | - | - 250 V |
| Rds On Drain Source Resistance | - | - | 11 Ohms |
| Transistor Polarity | - | - | P-Channel |
| Typical Turn Off Delay Time | - | - | 75 ns |
| Typical Turn On Delay Time | - | - | 6.4 ns |
| Qg Gate Charge | - | - | - 0.2 nC |
| Channel Mode | - | - | Enhancement |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSR92PL6327HTSA1 | MOSFET P-Ch -250V 140mA SOT-23-3 | |
| BSR92P | 全新原装 | ||
| BSR92P-L6327 | 全新原装 | ||
| BSR92PH6327 | -250V,-0.14A,P-Ch Small-Signal MOSFET | ||
| BSR92PL6327 | Small Signal Field-Effect Transistor, 0.14A I(D), 250V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSR92P L6327 | IGBT Transistors MOSFET P-Ch -250V 140mA SOT-23-3 | ||
Infineon Technologies |
BSR92PH6327XTSA1 | MOSFET P-CH 250V 140MA SC-59-3 | |
| BSR92PL6327HTSA1 | MOSFET P-CH 250V 0.14A SC-59 |