 |  | | |
| PartNumber | BSS816NW H6327 | BSS816NWH6327XTSA1 | BSS816NW L6327 |
| Description | MOSFET N-Ch 20V 1.4A SOT-323-3 | MOSFET N-Ch 20V 1.4A SOT-323-3 | MOSFET N-Ch 20V |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-323-3 | SOT-323-3 | SOT-323-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
| Id Continuous Drain Current | 1.4 A | 1.4 A | - |
| Rds On Drain Source Resistance | 107 mOhms | 160 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 300 mV | 300 mV | - |
| Vgs Gate Source Voltage | 8 V | 2.5 V | - |
| Qg Gate Charge | 600 pC | 0.6 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 0.9 mm | 0.9 mm |
| Length | 2.9 mm | 2 mm | 2 mm |
| Series | BSS816 | BSS816 | BSS816 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 1.3 mm | 1.25 mm | 1.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 4.9 S | - | - |
| Fall Time | 2.2 ns | 2.2 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 9 ns | 9 ns | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 11 ns | 11 ns | - |
| Typical Turn On Delay Time | 5.3 ns | 5.3 ns | - |
| Part # Aliases | BSS816NWH6327XT BSS816NWH6327XTSA1 SP000917562 | BSS816NW BSS816NWH6327XT H6327 SP000917562 | BSS816NWL6327HTMA1 |
| Unit Weight | 0.000176 oz | 0.000176 oz | 0.000176 oz |
| Product | - | - | MOSFET Small Signal |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSS816NW H6327 | MOSFET N-Ch 20V 1.4A SOT-323-3 | |
| BSS816NWH6327XTSA1 | MOSFET N-Ch 20V 1.4A SOT-323-3 | ||
| BSS816NWH6327XTSA1 | MOSFET N-CH 20V 1.4A SOT323 | ||
| BSS816NW L6327 | MOSFET N-CH 20V 1.4A SOT323 | ||
Infineon Technologies |
BSS816NW L6327 | MOSFET N-Ch 20V | |
| BSS81 | 全新原装 | ||
| BSS813 | 全新原装 | ||
| BSS816 | 全新原装 | ||
| BSS816NW | 全新原装 | ||
| BSS816NW H6327 | Trans MOSFET N-CH 20V 1.4A 3-Pin SOT-323 T/R (Alt: BSS816NW H6327) | ||
| BSS816NWH6327 | MOSFET N-CHAN OPTIMOS-2 20V 1.4A SOT323, RL | ||
| BSS816NWL6327XT | 20V,1.4A,N-channel power MOSFET | ||
| BSS81B | 全新原装 | ||
| BSS81B (INFINEON) | 全新原装 | ||
| BSS81B E6327 | 全新原装 | ||
| BSS81C | 全新原装 | ||
| BSS81C (INFINEON) | 全新原装 |