 | | |
| PartNumber | BSS84DW-7-F | BSS84DW-7 |
| Description | MOSFET -50V 200mW | MOSFET -50V 200mW |
| Manufacturer | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | N |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-363-6 | SOT-363-6 |
| Number of Channels | 2 Channel | 2 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 50 V | 50 V |
| Id Continuous Drain Current | 130 mA | 130 mA |
| Rds On Drain Source Resistance | 10 Ohms | 6 Ohms |
| Vgs th Gate Source Threshold Voltage | 800 mV | - |
| Vgs Gate Source Voltage | 5 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 300 mW | 300 mW |
| Configuration | Dual | Dual |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 1 mm | 1 mm |
| Length | 2.2 mm | 2.2 mm |
| Product | MOSFET Small Signal | MOSFET Small Signal |
| Series | BSS84 | BSS84DW |
| Transistor Type | 2 P-Channel | 2 P-Channel |
| Type | Enhancement Mode Field Effect Transistor | - |
| Width | 1.35 mm | 1.35 mm |
| Brand | Diodes Incorporated | Diodes Incorporated |
| Forward Transconductance Min | 0.05 S | 0.05 S |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 18 ns | 18 ns |
| Typical Turn On Delay Time | 10 ns | 10 ns |
| Unit Weight | 0.000212 oz | 0.000212 oz |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Diodes Incorporated |
BSS84DW-7-F | MOSFET -50V 200mW | |
| BSS84DW-7 | MOSFET -50V 200mW | ||
| BSS84DW-7 | MOSFET 2P-CH 50V 0.13A SC70-6 | ||
| BSS84DW-7-F | Darlington Transistors MOSFET -50V 200mW | ||
Infineon Technologies |
BSS84P H6327 | MOSFET P-Ch -60V -170mA SOT-23-3 | |
| BSS84P H6433 | MOSFET P-Ch -60V -170mA SOT-23-3 | ||
| BSS84P H6327 | Trans MOSFET P-CH 60V 0.17A 3-Pin SOT-23 T/R (Alt: BSS84P H6327) | ||
| BSS84P-E6327 | MOSFET P-CH 60V 170MA SOT-23 | ||
| BSS84P E6433 | MOSFET P-CH 60V 170MA SOT-23 | ||
ON Semiconductor |
BSS84LT1G | MOSFET 50V 130mA P-Channel | |
| BSS84LT1 | MOSFET P-CH 50V 130MA SOT-23 | ||
| BSS84LT1G | 全新原装 | ||
| BSS84LT7G | PFET SOT23 50V 130MA 10.0 | ||
| BSS84DW | 全新原装 | ||
| BSS84DW T/R | 全新原装 | ||
| BSS84DWQ-13-F | 全新原装 | ||
| BSS84E | 全新原装 | ||
| BSS84E-6327 | 全新原装 | ||
| BSS84LT | 全新原装 | ||
| BSS84P | MOSFET Transistor, P-Channel, TO-236AB | ||
| BSS84P L6327 | MOSFET P-Ch -60V 170mA SOT-23-3 | ||
| BSS84PE6327 | 全新原装 | ||
| BSS84DW-7-F-HN | 全新原装 | ||
| BSS84DW1T1G | 全新原装 | ||
| BSS84DWQ-13 | Trans MOSFET P-CH 50V 0.13A Automotive 6-Pin SOT-363 T/R | ||
| BSS84E-6433 | 全新原装 | ||
| BSS84E6327 | Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSS84E6327 , MAX6324GUT2 | 全新原装 | ||
| BSS84E7894 | 全新原装 | ||
| BSS84HT/R | 全新原装 | ||
| BSS84KS3 | 全新原装 | ||
| BSS84L | 全新原装 | ||
| BSS84LT1 , TFZGTR30B , A | 全新原装 | ||
| BSS84LT1/SP | 全新原装 | ||
| BSS84LT1G / SP | 全新原装 | ||
| BSS84LT1G2012 | 全新原装 | ||
| BSS84LTI | 全新原装 | ||
| BSS84LTIG | 全新原装 | ||
| BSS84N3 | 全新原装 | ||
| BSS84P E6327 | 全新原装 | ||
| BSS84P L7894 | 全新原装 | ||
| BSS84P L7979 | 全新原装 | ||
| BSS84P-NL | 全新原装 | ||
| BSS84PE6327 , MAX6414UK4 | 全新原装 | ||
| BSS84PE7894 | 全新原装 | ||
| BSS84PEL6327 , MAX6722UT | 全新原装 | ||
| BSS84DW-7-F-CUT TAPE | 全新原装 | ||
| BSS84DWQ-7 | Trans MOSFET P-CH 50V 0.13A Automotive 6-Pin SOT-363 T/R | ||
| BSS84LT1G-CUT TAPE | 全新原装 | ||
| BSS84DW TR | 全新原装 |