 |  | | |
| PartNumber | BTS247ZE3062AATMA2 | BTS247ZE3062A | BTS247ZE3062AATMA1 |
| Description | MOSFET N-Ch 55V 19A D2PAK-4 | - Bulk (Alt: BTS247ZE3062AATMA1) | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-5 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 55 V | - | - |
| Id Continuous Drain Current | 19 A | - | - |
| Rds On Drain Source Resistance | 18 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.6 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 60 nC | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 120 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | BTS247 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 10 S | - | - |
| Fall Time | 20 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 30 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 30 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Part # Aliases | BTS247Z E3062A SP000910846 | - | - |
| Unit Weight | 0.056438 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
BTS247ZE3062AATMA2 | MOSFET N-Ch 55V 19A D2PAK-4 | |
| BTS247ZE3062AATMA2 | MOSFET N-Ch 55V 19A D2PAK-4 | ||
| BTS247ZE3062A | 全新原装 | ||
| BTS247ZE3062AATMA1 | - Bulk (Alt: BTS247ZE3062AATMA1) | ||
| BTS247ZE3062ANTMA1 | - Bulk (Alt: BTS247ZE3062ANTMA1) |