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| PartNumber | BUK764R2-80E,118 | BUK764R2-80E | BUK764R2-80E118 |
| Description | MOSFET N-channel TrenchMOS standard level FET | Now Nexperia BUK764R2-80E - Power Field-Effect Transistor, 120A I(D), 80V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 80 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 3.1 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 136 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 324 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 53.2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 45.5 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 80.9 ns | - | - |
| Typical Turn On Delay Time | 30.6 ns | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
BUK764R2-80E,118 | MOSFET N-channel TrenchMOS standard level FET | |
| BUK764R2-80E,118 | Darlington Transistors MOSFET N-channel TrenchMOS standard level FET | ||
| BUK764R2-80E | 全新原装 | ||
| BUK764R2-80E118 | Now Nexperia BUK764R2-80E - Power Field-Effect Transistor, 120A I(D), 80V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |