BUK7E3

BUK7E3R5-60E,127 vs BUK7E3R1-40E,127

 
PartNumberBUK7E3R5-60E,127BUK7E3R1-40E,127
DescriptionMOSFET BUK7E3R5-60E/I2PAK/STANDARD MAMOSFET N-channel TrenchMOS standard level FET
ManufacturerNexperiaNexperia
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseI2PAK-3I2PAK-3
QualificationAEC-Q101AEC-Q101
PackagingTubeTube
BrandNexperiaNexperia
Product TypeMOSFETMOSFET
Factory Pack Quantity5050
SubcategoryMOSFETsMOSFETs
Unit Weight0.070548 oz0.081130 oz
Number of Channels-1 Channel
Transistor Polarity-N-Channel
Vds Drain Source Breakdown Voltage-40 V
Id Continuous Drain Current-100 A
Rds On Drain Source Resistance-2.6 mOhms
Vgs th Gate Source Threshold Voltage-3 V
Vgs Gate Source Voltage-20 V
Qg Gate Charge-79 nC
Minimum Operating Temperature-- 55 C
Maximum Operating Temperature-+ 175 C
Pd Power Dissipation-234 W
Configuration-Single
Channel Mode-Enhancement
Transistor Type-1 N-Channel
Fall Time-32 ns
Rise Time-29 ns
Typical Turn Off Delay Time-54 ns
Typical Turn On Delay Time-24 ns
制造商 型号 描述 RFQ
Nexperia
Nexperia
BUK7E3R5-60E,127 MOSFET BUK7E3R5-60E/I2PAK/STANDARD MA
BUK7E3R1-40E,127 MOSFET N-channel TrenchMOS standard level FET
BUK7E3R5-60E,127 MOSFET N-CH 60V 120A I2PAK
BUK7E3R1-40E,127 Darlington Transistors MOSFET N-channel TrenchMOS standard level FET
BUK7E3R1-40E127 Now Nexperia BUK7E3R1-40E - Power Field-Effect Transistor, 100A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
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