 | | | |
| PartNumber | BULD118 | BULD1180B | BULD118D |
| Description | |||
| Manufacturer | STMicroelectronics | - | STMicroelectronics |
| Product Category | Transistors (BJT) - Single | - | Transistors (BJT) - Single |
| Series | BULD118D | - | BULD118D |
| Packaging | Tube | - | Tube |
| Unit Weight | 0.012102 oz | - | 0.012102 oz |
| Mounting Style | Through Hole | - | Through Hole |
| Package Case | TO-251-3 Short Leads, IPak, TO-251AA | - | TO-251-3 Short Leads, IPak, TO-251AA |
| Mounting Type | Through Hole | - | Through Hole |
| Supplier Device Package | TO-251 | - | TO-251 |
| Configuration | Single | - | Single |
| Power Max | 20W | - | 20W |
| Transistor Type | NPN | - | NPN |
| Current Collector Ic Max | 2A | - | 2A |
| Voltage Collector Emitter Breakdown Max | 400V | - | 400V |
| DC Current Gain hFE Min Ic Vce | 10 @ 500mA, 5V | - | 10 @ 500mA, 5V |
| Vce Saturation Max Ib Ic | 1.5V @ 400mA, 2A | - | 1.5V @ 400mA, 2A |
| Current Collector Cutoff Max | 250μA | - | 250μA |
| Frequency Transition | - | - | - |
| Pd Power Dissipation | 20000 mW | - | 20000 mW |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Minimum Operating Temperature | - 65 C | - | - 65 C |
| Collector Emitter Voltage VCEO Max | 400 V | - | 400 V |
| Transistor Polarity | NPN | - | NPN |
| Collector Base Voltage VCBO | 700 V | - | 700 V |
| Emitter Base Voltage VEBO | 9 V | - | 9 V |
| Maximum DC Collector Current | 2 A | - | 2 A |
| DC Collector Base Gain hfe Min | 10 | - | 10 |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
BULD118D-1 | Bipolar Transistors - BJT PTD HIGH VOLTAGE | |
| BULD118D-1 | Bipolar Transistors - BJT IGBT & Power Bipola | ||
| BULD118 | 全新原装 | ||
| BULD1180B | 全新原装 | ||
| BULD118D | 全新原装 | ||
| BULD118D1 | 全新原装 | ||
| BULD118DB | Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-251AA, Plastic/Epoxy, 3 Pin |