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| PartNumber | CLF1G0060S-10U | CLF1G0060S-10 | CLF1G0060S-10UAMPLEON-CS |
| Description | RF JFET Transistors Broadband RF power GaN HEMT | - Bulk (Alt: CLF1G0060S-10) | |
| Manufacturer | NXP | NXP Semiconductors | - |
| Product Category | RF JFET Transistors | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Transistor Type | HEMT | HEMT | - |
| Technology | GaN Si | GaN Si | - |
| Gain | 14.5 dB | 14.5 dB | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Vgs Gate Source Breakdown Voltage | 3 V | - | - |
| Id Continuous Drain Current | 1.7 A | - | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT1227B | - | - |
| Packaging | Tube | Tube | - |
| Configuration | Single | Single | - |
| Height | 3.48 mm | - | - |
| Length | 5.18 mm | - | - |
| Operating Frequency | 3.5 GHz | 3.5 GHz | - |
| Operating Temperature Range | - 65 C to + 150 C | - 65 C to + 150 C | - |
| Width | 4.19 mm | - | - |
| Brand | NXP Semiconductors | - | - |
| Forward Transconductance Min | 380 mS | - | - |
| Number of Channels | 1 Channel | - | - |
| Product Type | RF JFET Transistors | - | - |
| Factory Pack Quantity | 20 | - | - |
| Subcategory | Transistors | - | - |
| Vgs th Gate Source Threshold Voltage | - 2 V | - | - |
| Package Case | - | SOT1227B | - |
| Id Continuous Drain Current | - | 1.7 A | - |
| Vds Drain Source Breakdown Voltage | - | 150 V | - |
| Vgs th Gate Source Threshold Voltage | - | - 2 V | - |
| Forward Transconductance Min | - | 380 mS | - |
| Vgs Gate Source Breakdown Voltage | - | 3 V | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
NXP Semiconductors |
CLF1G0060S-10U | RF JFET Transistors Broadband RF power GaN HEMT | |
| CLF1G0060S-10U | RF JFET Transistors Broadband RF power GaN HEMT | ||
| CLF1G0060S-10 | - Bulk (Alt: CLF1G0060S-10) | ||
| CLF1G0060S-10UAMPLEON-CS | 全新原装 |