DMB53D0UV

DMB53D0UV-7 vs DMB53D0UV vs DMB53D0UV-7 , VS26VUA1LA

 
PartNumberDMB53D0UV-7DMB53D0UVDMB53D0UV-7 , VS26VUA1LA
DescriptionMOSFET N-CHANNEL NPN ENHANCEMENT MODE
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETTransistors - Special Purpose-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-563-6--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-Channel, NPNN-Channel-
Vds Drain Source Breakdown Voltage50 V--
Id Continuous Drain Current160 mA--
Rds On Drain Source Resistance3.1 Ohms--
Vgs th Gate Source Threshold Voltage700 mV--
Vgs Gate Source Voltage12 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation250 mW--
ConfigurationSingle--
Channel ModeEnhancementEnhancement-
PackagingReelDigi-ReelR Alternate Packaging-
ProductMOSFET Small Signal--
SeriesDMB53DDMB53D-
Transistor Type1 N-ChannelNPN, N-Channel-
BrandDiodes Incorporated--
Forward Transconductance Min180 mS--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Unit Weight0.000106 oz0.000106 oz-
Current Rating-100mA PNP, 160mA N-Channel-
Package Case-SOT-563, SOT-666-
Mounting Type-Surface Mount-
Voltage Rated-45V NPN, 50V N-Channel-
Applications-General Purpose-
Supplier Device Package-SOT-563-
Id Continuous Drain Current-160 mA-
Vds Drain Source Breakdown Voltage-50 V-
Rds On Drain Source Resistance-5 Ohms-
制造商 型号 描述 RFQ
Diodes Incorporated
Diodes Incorporated
DMB53D0UV-7 MOSFET N-CHANNEL NPN ENHANCEMENT MODE
DMB53D0UV-7 IGBT Transistors MOSFET N-CHANNEL NPN ENHANCEMENT MODE
DMB53D0UV 全新原装
DMB53D0UV-7 , VS26VUA1LA 全新原装
DMB53D0UV-7-F 全新原装
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