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| PartNumber | DMC3016LSD-13 | DMC3016LSD | DMC3016LSD-13-F |
| Description | MOSFET 30V N & P Comp FET Enh 2.3Vgs 25nC 22nC | ||
| Manufacturer | Diodes Incorporated | DIDOES | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel, P-Channel | N-Channel P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 8.2 A, 6.2 A | - | - |
| Rds On Drain Source Resistance | 15 mOhms, 30 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 11.3 nC, 10.9 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.2 W | - | - |
| Configuration | Dual | 1 N-Channel 1 P-Channel | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Series | DMC3016 | DMC3016 | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel 1 P-Channel | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 5.6 ns, 40.4 ns | 5.6 ns 40.4 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 16.5 ns, 17.1 ns | 16.5 ns 17.1 ns | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 26.1 ns, 60.5 ns | 26.1 ns 60.5 ns | - |
| Typical Turn On Delay Time | 4.8 ns, 9.7 ns | 4.8 ns 9.7 ns | - |
| Unit Weight | 0.002610 oz | 0.002610 oz | - |
| Package Case | - | 8-SOIC (0.154", 3.90mm Width) | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 8-SO | - |
| FET Type | - | N and P-Channel | - |
| Power Max | - | 1.2W | - |
| Drain to Source Voltage Vdss | - | 30V | - |
| Input Capacitance Ciss Vds | - | 1415pF @ 15V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 8.2A, 6.2A | - |
| Rds On Max Id Vgs | - | 16 mOhm @ 12A, 10V | - |
| Vgs th Max Id | - | 2.3V @ 250μA | - |
| Gate Charge Qg Vgs | - | 25.1nC @ 10V | - |
| Pd Power Dissipation | - | 1.2 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 8.2 A - 6.2 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2.3 V | - |
| Rds On Drain Source Resistance | - | 15 mOhms 30 mOhms | - |
| Qg Gate Charge | - | 11.3 nC 10.9 nC | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMC3016LSD-13 | MOSFET 30V N & P Comp FET Enh 2.3Vgs 25nC 22nC | |
| DMC3016LSD-13 | Darlington Transistors MOSFET 30V N & P Comp FET Enh 2.3Vgs 25nC 22nC | ||
| DMC3016LSD | 全新原装 | ||
| DMC3016LSD-13-F | 全新原装 |