DME201

DME201010R vs DME20101 vs DME20102

 
PartNumberDME201010RDME20101DME20102
DescriptionBipolar Transistors - BJT SM SIG BIPLR TRANS GL WNG 2.9x2.8mm
ManufacturerPanasonicPanasonic Electronic Components-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Arrays-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-5--
Transistor PolarityNPN, PNPNPN PNP-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max- 50 V--
Gain Bandwidth Product fT150 MHz150 MHz-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingReelDigi-ReelR Alternate Packaging-
BrandPanasonic--
Continuous Collector Current- 100 mA- 100 mA-
DC Collector/Base Gain hfe Min210--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Series---
Package Case-SC-74A, SOT-753-
Mounting Type-Surface Mount-
Supplier Device Package-Mini5-G3-B-
Power Max-300mW-
Transistor Type-NPN, PNP (Emitter Coupled)-
Current Collector Ic Max-100mA-
Voltage Collector Emitter Breakdown Max-50V-
DC Current Gain hFE Min Ic Vce-210 @ 2mA, 10V-
Vce Saturation Max Ib Ic-300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA-
Current Collector Cutoff Max-100μA-
Frequency Transition-150MHz-
Collector Emitter Voltage VCEO Max-- 50 V-
DC Collector Base Gain hfe Min-210-
制造商 型号 描述 RFQ
Panasonic
Panasonic
DME201010R Bipolar Transistors - BJT SM SIG BIPLR TRANS GL WNG 2.9x2.8mm
Panasonic
Panasonic
DME201010R Bipolar Transistors - BJT SM SIG BIPLR TRANS GL WNG 2.9x2.8mm
DME201020R RF Bipolar Transistors Composite Transistor 2.9x2.8mm Gull Wing
DME20101 全新原装
DME20102 全新原装
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