DMN2058

DMN2058UW-13 vs DMN2058U-13 vs DMN2058U-7

 
PartNumberDMN2058UW-13DMN2058U-13DMN2058U-7
DescriptionMOSFET MOSFET BVDSS: 8V~24V SOT323 T&R 10KMOSFET MOSFET BVDSS: 8V-24VMOSFET BVDSS: 8V 24V SOT23 T&R
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4.6 A--
Rds On Drain Source Resistance35 mOhms--
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage12 V--
Qg Gate Charge7.7 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.13 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelReel-
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time3.3 ns--
Product TypeMOSFETMOSFET-
Rise Time4.9 ns--
Factory Pack Quantity1000010000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time9.9 ns--
Typical Turn On Delay Time2 ns--
Unit Weight0.000317 oz0.000282 oz-
RoHS-Y-
制造商 型号 描述 RFQ
Diodes Incorporated
Diodes Incorporated
DMN2058UW-7 MOSFET MOSFET BVDSS: 8V~24V SOT323 T&R 3K
DMN2058UW-13 MOSFET MOSFET BVDSS: 8V~24V SOT323 T&R 10K
DMN2058U-13 MOSFET MOSFET BVDSS: 8V-24V
DMN2058U-7 MOSFET BVDSS: 8V 24V SOT23 T&R
DMN2058UW-13 MOSFET BVDSS: 8V-24V SOT323 T&R
DMN2058UW-7 MOSFET N-CHAN 8V 24V SOT323
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