 |  | | |
| PartNumber | DMN3018SSD-13 | DMN3018SSD-13-F | DMN3018SSS |
| Description | MOSFET 30V Dual N-Ch Enh 22mOhm 10V 6.7A | ||
| Manufacturer | Diodes Incorporated | - | Diodes Incorporated |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOIC-8 | - | - |
| Number of Channels | 2 Channel | - | 2 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 6.7 A | - | - |
| Rds On Drain Source Resistance | 22 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 13.2 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 1.5 W | - | - |
| Configuration | Dual | - | Dual Dual Drain |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Series | DMN3018 | - | DMN3018 |
| Transistor Type | 2 N-Channel | - | 2 N-Channel |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 4.1 ns | - | 4.1 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 4.4 ns | - | 4.4 ns |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20.1 ns | - | 20.1 ns |
| Typical Turn On Delay Time | 4.3 ns | - | 4.3 ns |
| Unit Weight | 0.002610 oz | - | 0.002610 oz |
| Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 8-SO |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 1.4W |
| Drain to Source Voltage Vdss | - | - | 30V |
| Input Capacitance Ciss Vds | - | - | 697pF @ 15V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 7.3A (Ta) |
| Rds On Max Id Vgs | - | - | 21 mOhm @ 10A, 10V |
| Vgs th Max Id | - | - | 2.1V @ 250μA |
| Gate Charge Qg Vgs | - | - | 13.2nC @ 10V |
| Pd Power Dissipation | - | - | 1.7 W |
| Vgs Gate Source Voltage | - | - | 25 V |
| Id Continuous Drain Current | - | - | 9.7 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2.1 V |
| Rds On Drain Source Resistance | - | - | 35 mOhms |
| Qg Gate Charge | - | - | 6 nC |
| Forward Transconductance Min | - | - | 8.3 S |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN3018SSS-13 | MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K | |
| DMN3018SSD-13 | MOSFET 30V Dual N-Ch Enh 22mOhm 10V 6.7A | ||
| DMN3018SSD-13-F | 全新原装 | ||
| DMN3018SSS | 全新原装 | ||
| DMN3018SSS-13-F | 全新原装 | ||
| DMN3018SSS-13 | IGBT Transistors MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K | ||
| DMN3018SSD-13 | MOSFET 30V Dual N-Ch Enh 22mOhm 10V 6.7A |