DMN3112

DMN3112S-7 vs DMN3112S-7-F vs DMN3112SSS

 
PartNumberDMN3112S-7DMN3112S-7-FDMN3112SSS
DescriptionMOSFET N-Ch FET 30V 20A 57mOhm 10V VGS
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current5.8 A--
Rds On Drain Source Resistance92 mOhms--
Vgs th Gate Source Threshold Voltage1.9 V--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.4 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesDMN3112S--
Transistor Type1 N-Channel--
Width1.3 mm--
BrandDiodes Incorporated--
Forward Transconductance Min4.7 S--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Unit Weight0.000282 oz--
制造商 型号 描述 RFQ
Diodes Incorporated
Diodes Incorporated
DMN3112S-7 MOSFET N-Ch FET 30V 20A 57mOhm 10V VGS
DMN3112S-7 MOSFET N-CH 30V 5.8A SOT23-3
DMN3112S-7-F 全新原装
DMN3112SSS 全新原装
DMN3112SSS-13 MOSFET N-CH 30V 6A 8SOP
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