 |  | | |
| PartNumber | DMN6068SE-13 | DMN6068SE-13DKR-ND | DMN6068SE-13-CUT TAPE |
| Description | MOSFET ENHANCE MODE MOSFET 60V N-CHAN | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 5.6 A | - | - |
| Rds On Drain Source Resistance | 68 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 10.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Series | DMN6068 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 19.7 S | - | - |
| Fall Time | 8.7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10.8 ns | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 11.9 ns | - | - |
| Typical Turn On Delay Time | 3.6 ns | - | - |
| Unit Weight | 0.003951 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN6068SE-13 | MOSFET ENHANCE MODE MOSFET 60V N-CHAN | |
| DMN6068SE-13DKR-ND | 全新原装 | ||
| DMN6068SE-13-CUT TAPE | 全新原装 | ||
| DMN6068SE-13 | Darlington Transistors MOSFET ENHANCE MODE MOSFET 60V N-CHAN |