 |  | | |
| PartNumber | DMN65D8LW-7 | DMN65D8LW-7-F | DMN65D8LW-7-CUT TAPE |
| Description | MOSFET MOSFET BVDSS: 61V-10 100V SOT323 T&R 3K | ||
| Manufacturer | Diodes Incorporated | DIODES | - |
| Product Category | MOSFET | IC Chips | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-323-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 300 mA | - | - |
| Rds On Drain Source Resistance | 3 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 870 pC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 300 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | DMN65 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 80 mS | - | - |
| Fall Time | 7.3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2.8 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 12.6 ns | - | - |
| Typical Turn On Delay Time | 2.7 ns | - | - |
| Unit Weight | 0.000176 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN65D8LW-7 | MOSFET MOSFET BVDSS: 61V-10 100V SOT323 T&R 3K | |
| DMN65D8LW-7-F | 全新原装 | ||
| DMN65D8LW-7-CUT TAPE | 全新原装 | ||
| DMN65D8LW-7 | Darlington Transistors MOSFET MOSFET BVDSS: 61V-10 100V SOT323 T&R 3K |