| PartNumber | DMN90H8D5HCTI | DMN90H8D5HCT | DMN90H2D2HCTI |
| Description | MOSFET MOSFETBVDSS: >800V | MOSFET MOSFET BVDSS: >800V TO220AB TUBE 50PCS | MOSFET MOSFET BVDSS: >800V ITO-220AB TUBE 50PCS |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | ITO-220AB-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 900 V | - | - |
| Id Continuous Drain Current | 2.5 A | - | - |
| Rds On Drain Source Resistance | 5.5 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 7.9 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 30 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 17 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 21 ns | - | - |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 17.6 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Unit Weight | 0.065257 oz | 0.065257 oz | 0.065257 oz |
| Packaging | - | Tube | Tube |
| Series | - | DMN90H8D5HCT | DMN90H2D2HCTI |