DMP2035UV

DMP2035UVT-7 vs DMP2035UVT vs DMP2035UVT-7-CUT TAPE

 
PartNumberDMP2035UVT-7DMP2035UVTDMP2035UVT-7-CUT TAPE
DescriptionMOSFET P-Ch -20V ENH Mode 35mOhm -4.5V -6.0A
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSOT-26-6--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current6 A--
Rds On Drain Source Resistance35 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage12 V--
Qg Gate Charge15.4 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.2 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
SeriesDMP2035--
Transistor Type1 P-Channel--
BrandDiodes Incorporated--
Forward Transconductance Min18 S--
Fall Time42 ns--
Product TypeMOSFET--
Rise Time12 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time94 ns--
Typical Turn On Delay Time17 ns--
制造商 型号 描述 RFQ
Diodes Incorporated
Diodes Incorporated
DMP2035UVT-7 MOSFET P-Ch -20V ENH Mode 35mOhm -4.5V -6.0A
DMP2035UVTQ-13 MOSFET MOSFET BVDSS: 8V-24V
DMP2035UVTQ-7 MOSFET MOSFET BVDSS: 8V-24V
DMP2035UVT 全新原装
DMP2035UVT-7-F 全新原装
DMP2035UVT-7-CUT TAPE 全新原装
DMP2035UVTQ-7 MOSFET P-CH 20V 7.2A TSOT26
DMP2035UVT-7 Darlington Transistors MOSFET P-Ch -20V ENH Mode 35mOhm -4.5V -6.0A
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