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| PartNumber | DMP2160UFDB-7-01 | DMP2160UFDB-7 | DMP2160UFDB |
| Description | IGBT Transistors MOSFET 20V 3.8A DUAL P-CHAN | ||
| Manufacturer | DIODES | Diodes Incorporated | DIODES |
| Product Category | IC Chips | FETs - Arrays | FETs - Arrays |
| Series | - | DMP2160 | - |
| Packaging | - | Tape & Reel (TR) | - |
| Mounting Style | - | SMD/SMT | - |
| Package Case | - | 6-UDFN Exposed Pad | - |
| Technology | - | Si | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Number of Channels | - | 2 Channel | - |
| Supplier Device Package | - | 6-UDFN2020 (2x2) | - |
| Configuration | - | Dual | - |
| FET Type | - | 2 P-Channel (Dual) | - |
| Power Max | - | 1.4W | - |
| Transistor Type | - | 2 P-Channel | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 536pF @ 10V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 3.8A | - |
| Rds On Max Id Vgs | - | 70 mOhm @ 2.8A, 4.5V | - |
| Vgs th Max Id | - | 900mV @ 250μA | - |
| Gate Charge Qg Vgs | - | 6.5nC @ 4.5V | - |
| Pd Power Dissipation | - | 1.4 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 12.09 ns | - |
| Rise Time | - | 12.09 ns | - |
| Vgs Gate Source Voltage | - | 12 V | - |
| Id Continuous Drain Current | - | 3.8 A | - |
| Vds Drain Source Breakdown Voltage | - | - 20 V | - |
| Rds On Drain Source Resistance | - | 70 mOhms | - |
| Transistor Polarity | - | P-Channel | - |
| Typical Turn Off Delay Time | - | 55.34 ns | - |
| Typical Turn On Delay Time | - | 11.51 ns | - |
| Channel Mode | - | Enhancement | - |