DMP2160UF

DMP2160UFDB-7-01 vs DMP2160UFDB-7 vs DMP2160UFDB

 
PartNumberDMP2160UFDB-7-01DMP2160UFDB-7DMP2160UFDB
DescriptionIGBT Transistors MOSFET 20V 3.8A DUAL P-CHAN
ManufacturerDIODESDiodes IncorporatedDIODES
Product CategoryIC ChipsFETs - ArraysFETs - Arrays
Series-DMP2160-
Packaging-Tape & Reel (TR)-
Mounting Style-SMD/SMT-
Package Case-6-UDFN Exposed Pad-
Technology-Si-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Number of Channels-2 Channel-
Supplier Device Package-6-UDFN2020 (2x2)-
Configuration-Dual-
FET Type-2 P-Channel (Dual)-
Power Max-1.4W-
Transistor Type-2 P-Channel-
Drain to Source Voltage Vdss-20V-
Input Capacitance Ciss Vds-536pF @ 10V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-3.8A-
Rds On Max Id Vgs-70 mOhm @ 2.8A, 4.5V-
Vgs th Max Id-900mV @ 250μA-
Gate Charge Qg Vgs-6.5nC @ 4.5V-
Pd Power Dissipation-1.4 W-
Maximum Operating Temperature-+ 150 C-
Minimum Operating Temperature-- 55 C-
Fall Time-12.09 ns-
Rise Time-12.09 ns-
Vgs Gate Source Voltage-12 V-
Id Continuous Drain Current-3.8 A-
Vds Drain Source Breakdown Voltage-- 20 V-
Rds On Drain Source Resistance-70 mOhms-
Transistor Polarity-P-Channel-
Typical Turn Off Delay Time-55.34 ns-
Typical Turn On Delay Time-11.51 ns-
Channel Mode-Enhancement-
制造商 型号 描述 RFQ
Diodes Incorporated
Diodes Incorporated
DMP2160UFDBQ-7 MOSFET Dual P-Ch Enh FET VDSS -20V -12VGSS
DMP2160UFDB-7-01 全新原装
DMP2160UFDB-7-CUT TAPE 全新原装
DMP2160UFDBQ-7 IGBT Transistors MOSFET Dual P-Ch Enh FET VDSS -20V -12VGSS
DMP2160UFDB-7 IGBT Transistors MOSFET 20V 3.8A DUAL P-CHAN
DMP2160UFDB 全新原装
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