 |  | | |
| PartNumber | DMP2160UFDBQ-7 | DMP2160UFDB-7-01 | DMP2160UFDB |
| Description | MOSFET Dual P-Ch Enh FET VDSS -20V -12VGSS | ||
| Manufacturer | Diodes Incorporated | DIODES | DIODES |
| Product Category | MOSFET | IC Chips | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | U-DFN2020-B-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 3.8 A | - | - |
| Rds On Drain Source Resistance | 68 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 900 mV | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 6.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.4 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | - |
| Series | DMP2160 | - | - |
| Transistor Type | 2 P-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 27.54 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 12.09 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 55.34 ns | - | - |
| Typical Turn On Delay Time | 11.51 ns | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMP2160UFDBQ-7 | MOSFET Dual P-Ch Enh FET VDSS -20V -12VGSS | |
| DMP2160UFDBQ-7 | IGBT Transistors MOSFET Dual P-Ch Enh FET VDSS -20V -12VGSS | ||
| DMP2160UFDB-7-01 | 全新原装 | ||
| DMP2160UFDB | 全新原装 | ||
| DMP2160UFDB-7-CUT TAPE | 全新原装 | ||
| DMP2160UFDB-7 | IGBT Transistors MOSFET 20V 3.8A DUAL P-CHAN |