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| PartNumber | DMP21D5UFB4 | DMP21D5UFB4-7B-01 | DMP21D5UFB4-7B |
| Description | DIIDMP21D5UFB4-7B-01 P-CHANNEL ENHANCEME (Alt: DMP21D5UFB4-7B-01) | Darlington Transistors MOSFET MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 10K | |
| Manufacturer | Diodes Incorporated | - | Diodes Incorporated |
| Product Category | FETs - Single | - | FETs - Single |
| Series | DMP21 | - | DMP21 |
| Packaging | Digi-ReelR Alternate Packaging | - | Digi-ReelR Alternate Packaging |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package Case | 3-XFDFN | - | 3-XFDFN |
| Technology | Si | - | Si |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | - | Surface Mount |
| Number of Channels | 1 Channel | - | 1 Channel |
| Supplier Device Package | 3-DFN1006 (1.0x0.6) | - | 3-DFN1006 (1.0x0.6) |
| Configuration | Single | - | Single |
| FET Type | MOSFET P-Channel, Metal Oxide | - | MOSFET P-Channel, Metal Oxide |
| Power Max | 460mW | - | 460mW |
| Transistor Type | 1 P-Channel | - | 1 P-Channel |
| Drain to Source Voltage Vdss | 20V | - | 20V |
| Input Capacitance Ciss Vds | 46.1pF @ 10V | - | 46.1pF @ 10V |
| FET Feature | Standard | - | Standard |
| Current Continuous Drain Id 25°C | 700mA (Ta) | - | 700mA (Ta) |
| Rds On Max Id Vgs | 970 mOhm @ 100mA, 5V | - | 970 mOhm @ 100mA, 5V |
| Vgs th Max Id | 1V @ 250μA | - | 1V @ 250μA |
| Gate Charge Qg Vgs | 500nC @ 4.5V | - | 500nC @ 4.5V |
| Pd Power Dissipation | 460 mW | - | 460 mW |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Fall Time | 19.2 ns | - | 19.2 ns |
| Rise Time | 4.3 ns | - | 4.3 ns |
| Vgs Gate Source Voltage | 8 V | - | 8 V |
| Id Continuous Drain Current | - 700 mA | - | - 700 mA |
| Vds Drain Source Breakdown Voltage | - 20 V | - | - 20 V |
| Vgs th Gate Source Threshold Voltage | - 1 V | - | - 1 V |
| Rds On Drain Source Resistance | 1 Ohms | - | 1 Ohms |
| Transistor Polarity | P-Channel | - | P-Channel |
| Typical Turn Off Delay Time | 20.2 ns | - | 20.2 ns |
| Typical Turn On Delay Time | 4.3 ns | - | 4.3 ns |
| Qg Gate Charge | 0.5 nC | - | 0.5 nC |
| Forward Transconductance Min | 0.7 S | - | 0.7 S |
| Channel Mode | Enhancement | - | Enhancement |