DMP3017SF

DMP3017SFGQ-7 vs DMP3017SFG-7

 
PartNumberDMP3017SFGQ-7DMP3017SFG-7
DescriptionMOSFET 30V P-Ch Enh FET 30Vgss -80A IdmMOSFET FET BVDSS 25V 30V P-Ch 0.94W 2246pF
ManufacturerDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CasePowerDI3333-8PowerDI3333-8
Number of Channels1 Channel1 Channel
Transistor PolarityP-ChannelP-Channel
Vds Drain Source Breakdown Voltage30 V30 V
Id Continuous Drain Current11.5 A11.5 A
Rds On Drain Source Resistance18 mOhms10 mOhms
Vgs th Gate Source Threshold Voltage1 V1 V
Vgs Gate Source Voltage25 V10 V
Qg Gate Charge41 nC41 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation940 mW2.2 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
QualificationAEC-Q101-
PackagingReelReel
SeriesDMP3017DMP3017
BrandDiodes IncorporatedDiodes Incorporated
Forward Transconductance Min24 S24 S
Fall Time36.8 ns36.8 ns
Product TypeMOSFETMOSFET
Rise Time15.4 ns15.4 ns
Factory Pack Quantity20002000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time45.6 ns45.6 ns
Typical Turn On Delay Time7.5 ns7.5 ns
Unit Weight0.002540 oz0.002540 oz
Transistor Type-1 P-Channel
制造商 型号 描述 RFQ
Diodes Incorporated
Diodes Incorporated
DMP3017SFGQ-7 MOSFET 30V P-Ch Enh FET 30Vgss -80A Idm
DMP3017SFG-7 MOSFET FET BVDSS 25V 30V P-Ch 0.94W 2246pF
DMP3017SFGQ-7 30V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP3017SFG-7 IGBT Transistors MOSFET FET BVDSS 25V 30V P-Ch 0.94W 2246pF
DMP3017SFK 全新原装
DMP3017SFG-13-55 全新原装
DMP3017SFG-7-55 Transistor MOSFET P-CH 30V 15.2A 8-Pin PowerDI3333 T/R (Alt: DMP3017SFG-7-55)
DMP3017SFG-7-CUT TAPE 全新原装
DMP3017SFV-13 MOSFET P-CH 30V 40A POWERDI3333
DMP3017SFV-7 MOSFET P-CH 30V 40A POWERDI3333
DMP3017SFGQ-13 30V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP3017SFK-7 Darlington Transistors MOSFET 30V P-Ch Enh FET 25Mgs 2207pF 21.6nC
DMP3017SFK-13 MOSFET 30V P-Ch Enh FET 25Mgs 2207pF 21.6nC
DMP3017SFG-13 MOSFET FET BVDSS 25V 30V P-Ch 0.94W 2246pF
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