DMP3098LSD stock, DMP3098LSD, DMP3098LSD-13


PartNumber	DMP3098LSD-13	DMP3098LSD	DMP3098LSD-13-F
Description	MOSFET PMOS-DUAL
Manufacturer	Diodes Incorporated	Diodes Incorporated	-
Product Category	MOSFET	FETs - Arrays	-
RoHS	Y	-	-
Technology	Si	Si	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	SO-8	-	-
Number of Channels	2 Channel	2 Channel	-
Transistor Polarity	P-Channel	P-Channel	-
Vds Drain Source Breakdown Voltage	30 V	-	-
Id Continuous Drain Current	4.4 A	-	-
Rds On Drain Source Resistance	115 mOhms	-	-
Vgs Gate Source Voltage	20 V	-	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Pd Power Dissipation	1.8 W	-	-
Configuration	Dual	Dual Dual Drain	-
Channel Mode	Enhancement	Enhancement	-
Packaging	Reel	Digi-ReelR Alternate Packaging	-
Height	1.5 mm	-	-
Length	5.3 mm	-	-
Product	MOSFET Small Signal	-	-
Series	DMP3098	DMP3098	-
Transistor Type	2 P-Channel	2 P-Channel	-
Width	4.1 mm	-	-
Brand	Diodes Incorporated	-	-
Fall Time	5 ns	5 ns	-
Product Type	MOSFET	-	-
Rise Time	5 ns	5 ns	-
Factory Pack Quantity	2500	-	-
Subcategory	MOSFETs	-	-
Typical Turn Off Delay Time	17.6 ns	17.6 ns	-
Typical Turn On Delay Time	6 ns	6 ns	-
Unit Weight	0.002610 oz	0.002610 oz	-
Package Case	-	8-SOIC (0.154", 3.90mm Width)	-
Operating Temperature	-	-55°C ~ 150°C (TJ)	-
Mounting Type	-	Surface Mount	-
Supplier Device Package	-	8-SOP	-
FET Type	-	2 P-Channel (Dual)	-
Power Max	-	1.8W	-
Drain to Source Voltage Vdss	-	30V	-
Input Capacitance Ciss Vds	-	336pF @ 25V	-
FET Feature	-	Logic Level Gate	-
Current Continuous Drain Id 25°C	-	4.4A	-
Rds On Max Id Vgs	-	65 mOhm @ 5A, 10V	-
Vgs th Max Id	-	2.1V @ 250μA	-
Gate Charge Qg Vgs	-	7.8nC @ 10V	-
Pd Power Dissipation	-	1.8 W	-
Vgs Gate Source Voltage	-	20 V	-
Id Continuous Drain Current	-	4.4 A	-
Vds Drain Source Breakdown Voltage	-	30 V	-
Rds On Drain Source Resistance	-	115 mOhms	-