| PartNumber | DMPH6050SFGQ-7 | DMPH6050SFGQ-13 | DMPH6050SK3-13 |
| Description | MOSFET MOSFET BVDSS: 41V-60V | MOSFET MOSFET BVDSS: 41V-60V | MOSFET MOSFET BVDSS: |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerDI3333-8 | PowerDI3333-8 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 18 A | 18 A | 23.6 A |
| Rds On Drain Source Resistance | 50 mOhms | 50 mOhms | 50 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | 1 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 10 V |
| Qg Gate Charge | 24.1 nC | 24.1 nC | 25 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 2.8 W | 2.8 W | 1.9 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | Reel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 25.3 ns | 25.3 ns | 29.7 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 6.3 ns | 6.3 ns | 8.6 ns |
| Factory Pack Quantity | 2000 | 3000 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 46.7 ns | 46.7 ns | 49.4 ns |
| Typical Turn On Delay Time | 4.3 ns | 4.3 ns | 5.3 ns |
| Unit Weight | 0.002540 oz | 0.002540 oz | 0.011993 oz |
| Transistor Type | - | - | 1 P-Channel |