DMT6016LS stock, DMT6016LS, DMT6016LSS-13


PartNumber	DMT6016LSS-13	DMT6016LS	DMT6016LSS
Description	MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A
Manufacturer	Diodes Incorporated	DIODES	DIODES
Product Category	MOSFET	Transistors - FETs, MOSFETs - Single	Transistors - FETs, MOSFETs - Single
RoHS	Y	-	-
Technology	Si	Si	Si
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	SO-8	-	-
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	60 V	-	-
Id Continuous Drain Current	9.2 A	-	-
Rds On Drain Source Resistance	18 mOhms	-	-
Vgs th Gate Source Threshold Voltage	1 V	-	-
Vgs Gate Source Voltage	10 V	-	-
Qg Gate Charge	17 nC	-	-
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	2.1 W	-	-
Configuration	Single	Single	Single
Channel Mode	Enhancement	Enhancement	Enhancement
Packaging	Reel	Reel	Reel
Series	DMT60	DMT60	DMT60
Transistor Type	1 N-Channel	1 N-Channel	1 N-Channel
Brand	Diodes Incorporated	-	-
Fall Time	7 ns	7 ns	7 ns
Product Type	MOSFET	-	-
Rise Time	5.2 ns	5.2 ns	5.2 ns
Factory Pack Quantity	2500	-	-
Subcategory	MOSFETs	-	-
Typical Turn Off Delay Time	13 ns	13 ns	13 ns
Typical Turn On Delay Time	3.4 ns	3.4 ns	3.4 ns
Unit Weight	0.002610 oz	0.002610 oz	0.002610 oz
Package Case	-	SO-8	SO-8
Pd Power Dissipation	-	2.7 W	2.7 W
Vgs Gate Source Voltage	-	20 V	20 V
Id Continuous Drain Current	-	10.6 A	10.6 A
Vds Drain Source Breakdown Voltage	-	60 V	60 V
Vgs th Gate Source Threshold Voltage	-	2.5 V	2.5 V
Rds On Drain Source Resistance	-	16 mOhms	16 mOhms
Qg Gate Charge	-	17 nC	17 nC

Search Part Number : "DMT6016LS", Match & Start with "DMT6016LS" - Total : 5

制造商	型号	描述
Diodes Incorporated	DMT6016LSS-13	MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A
	DMT6016LS	全新原装
	DMT6016LSS	全新原装
	DMT6016LSS/////////////	全新原装
	DMT6016LSS-13	IGBT Transistors MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A

DMT6016LS