DMTH6016LFD

DMTH6016LFDFW-7 vs DMTH6016LFDFW-13 vs DMTH6016LFDFWQ-13

 
PartNumberDMTH6016LFDFW-7DMTH6016LFDFW-13DMTH6016LFDFWQ-13
DescriptionMOSFET MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 3KMOSFET MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 10KMOSFET MOSFET BVDSS: 41V-60V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseU-DFN2020-6U-DFN2020-6U-DFN2020-6
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V60 V
Id Continuous Drain Current9.4 A9.4 A9.4 A
Rds On Drain Source Resistance18 mOhms18 mOhms18 mOhms
Vgs th Gate Source Threshold Voltage1 V1 V1 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge15.3 nC15.3 nC15.3 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation2.3 W2.3 W2.3 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
SeriesDMTH6016DMTH6016DMTH6016LFDFWQ
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time7.2 ns7.2 ns7.2 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time4.2 ns4.2 ns4.2 ns
Factory Pack Quantity30001000010000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time14.5 ns14.5 ns14.5 ns
Typical Turn On Delay Time3.2 ns3.2 ns3.2 ns
Unit Weight0.000247 oz0.000247 oz-
Qualification--AEC-Q101
Transistor Type--1 N-Channel
制造商 型号 描述 RFQ
Diodes Incorporated
Diodes Incorporated
DMTH6016LFDFW-7 MOSFET MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 3K
DMTH6016LFDFWQ-7R MOSFET MOSFET BVDSS: 41V-60V
DMTH6016LFDFW-13 MOSFET MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 10K
DMTH6016LFDFWQ-7 MOSFET MOSFET BVDSS: 41V-60V
DMTH6016LFDFWQ-13 MOSFET MOSFET BVDSS: 41V-60V
DMTH6016LFDFW-13 MOSFET BVDSS: 41V-60V U-DFN2020-
DMTH6016LFDFW-7 MOSFET BVDSS: 41V-60V U-DFN2020-
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