DPLS350Y-1

DPLS350Y-13 vs DPLS350Y-13-GIGA vs DPLS350Y-13-GIGA PB-FRE

 
PartNumberDPLS350Y-13DPLS350Y-13-GIGADPLS350Y-13-GIGA PB-FRE
DescriptionBipolar Transistors - BJT 1000mW -50Vceo
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-89-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 50 V--
Collector Base Voltage VCBO- 50 V--
Emitter Base Voltage VEBO- 6 V--
Collector Emitter Saturation Voltage- 390 mV--
Maximum DC Collector Current- 5 A--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesDPLS350--
Height1.5 mm--
Length4.5 mm--
PackagingReel--
Width2.48 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min80 at - 3 A, - 2 V--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.001834 oz--
制造商 型号 描述 RFQ
Diodes Incorporated
Diodes Incorporated
DPLS350Y-13 Bipolar Transistors - BJT 1000mW -50Vceo
DPLS350Y-13-GIGA 全新原装
DPLS350Y-13-GIGA PB-FRE 全新原装
DPLS350Y-13 Bipolar Transistors - BJT 1000mW -50Vceo
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