 |  | | |
| PartNumber | DXT5401-13 | DXT5401 | DXT555-13 |
| Description | Bipolar Transistors - BJT 1W -150V | ||
| Manufacturer | Diodes Incorporated | D | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
| RoHS | Y | - | - |
| Package / Case | SOT-89-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 150 V | - | - |
| Collector Base Voltage VCBO | - 160 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | - 500 mV | - | - |
| Maximum DC Collector Current | - 600 mA | - | - |
| Gain Bandwidth Product fT | 300 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | DXT5401 | - | - |
| Height | 1.6 mm | - | - |
| Length | 4.6 mm | - | - |
| Packaging | Reel | - | - |
| Width | 2.6 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| DC Collector/Base Gain hfe Min | 50 at - 50 mA, - 5 V | - | - |
| Pd Power Dissipation | 1000 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.001834 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Diodes Incorporated |
DXT5551P5-13 | Bipolar Transistors - BJT BIPOLAR TRANS,NPN 160V, 600mA | |
| DXT5551-13 | Bipolar Transistors - BJT 1W 160V | ||
| DXT5401-13 | Bipolar Transistors - BJT 1W -150V | ||
| DXT5401 | 全新原装 | ||
| DXT555-13 | 全新原装 | ||
| DXT5551 | 全新原装 | ||
| DXT5551-13 , XN6401 | 全新原装 | ||
| DXT5551-13-F | 全新原装 | ||
| DXT5616U | 全新原装 | ||
| DXT5551-13 | Bipolar Transistors - BJT 1W 160V | ||
| DXT5551P5-13 | Bipolar Transistors - BJT BIPOLAR TRANS,NPN 160V, 600mA | ||
| DXT5401-13 | Bipolar Transistors - BJT 1W -150V |