ECH8651

ECH8651R-R-TL-H vs ECH8651R-R-TL-HX vs ECH8651R-TL-H

 
PartNumberECH8651R-R-TL-HECH8651R-R-TL-HXECH8651R-TL-H
DescriptionMOSFET NCH+NCH 2.5V DRIVE SERIESINTEGRATED CIRCUITIGBT Transistors MOSFET NCH+NCH 4V DRIVE SERIES
ManufacturerON Semiconductor-ON Semiconductor
Product CategoryMOSFET-FETs - Arrays
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseECH-8--
Number of Channels2 Channel-2 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage24 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance14 mOhms--
Pd Power Dissipation1.4 W--
ConfigurationDual-Dual
PackagingReel-Digi-ReelR Alternate Packaging
SeriesECH8651R-ECH8651R
Transistor Type2 N-Channel-2 N-Channel
BrandON Semiconductor--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Package Case--8-SMD, Flat Lead
Operating Temperature--150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-ECH
FET Type--2 N-Channel (Dual)
Power Max--1.5W
Drain to Source Voltage Vdss--24V
Input Capacitance Ciss Vds---
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--10A
Rds On Max Id Vgs--14 mOhm @ 5A, 4.5V
Vgs th Max Id---
Gate Charge Qg Vgs--24nC @ 10V
Pd Power Dissipation--1.4 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Vgs Gate Source Voltage--12 V
Id Continuous Drain Current--10 A
Vds Drain Source Breakdown Voltage--24 V
Rds On Drain Source Resistance--14 mOhms
制造商 型号 描述 RFQ
ON Semiconductor
ON Semiconductor
ECH8651R-TL-HX MOSFET NCH+NCH 2.5V DRIVE SERIES
ECH8651R-R-TL-H MOSFET NCH+NCH 2.5V DRIVE SERIES
ECH8651R-R-TL-HX INTEGRATED CIRCUIT
ECH8651R-TL-HX IGBT Transistors MOSFET NCH+NCH 2.5V DRIVE SERIES
ECH8651R-TL-H IGBT Transistors MOSFET NCH+NCH 4V DRIVE SERIES
ECH8651R-R-TL-H RF Bipolar Transistors MOSFET NCH+NCH 2.5V DRIVE SERIES
ECH8651R 全新原装
ECH8651R-R-RL-H 全新原装
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