 |  | | |
| PartNumber | F4-50R12KS4 | F4-50R12KS4_B11 | F4-50R07W2H3_B51 |
| Description | IGBT Modules N-CH 1.2KV 70A | IGBT Modules IGBT Module 50A 1200V | IGBT MODULE VCES 650V 50A |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| RoHS | Y | Y | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Quad | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 3.75 V | - | - |
| Continuous Collector Current at 25 C | 70 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 355 W | - | - |
| Package / Case | Econo 2 | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Packaging | Tray | Tray | - |
| Height | 17 mm | - | - |
| Length | 107.5 mm | - | - |
| Width | 45 mm | - | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | F450R12KS4BOSA1 SP000100431 | F450R12KS4B11BOSA1 SP000924500 | - |
| Unit Weight | 6.349313 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
F4-50R12KS4 | IGBT Modules N-CH 1.2KV 70A | |
| F4-50R12KS4_B11 | IGBT Modules IGBT Module 50A 1200V | ||
| F4-50R12KS4_B11 | IGBT Modules IGBT Module 50A 1200V | ||
| F4-50R12KS4 | IGBT Modules N-CH 1.2KV 70A | ||
| F4-50R07W2H3_B51 | IGBT MODULE VCES 650V 50A | ||
| F4-50R12KS4ENG | 全新原装 | ||
| F4-50R07W1H3_B11A | Trans IGBT Module N-CH 650V 55A 20-pin EASY1B-3 (Alt: F4-50R07W1H3_B11A) | ||
| F4-50R12MS4 | Trans IGBT Module N-CH 1.2KV 70A 14-Pin ECONOD - Bulk (Alt: F4-50R12MS4) | ||
| F4-50R06W1E3 | IGBT Modules N-CH 600V 75A |