 |  | | |
| PartNumber | FCB110N65F | FCB1100DB/009 | FCB11N60 |
| Description | MOSFET SF2 650V 110MOHM F D2PAK | MOSFET, N, D2-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:11A, Drain Source Voltage Vds:600V, On Resistance Rds(on):0.32ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage V | |
| Manufacturer | ON Semiconductor | - | FAIRCHILD |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 35 A | - | - |
| Rds On Drain Source Resistance | 110 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V, 30 V | - | - |
| Qg Gate Charge | 98 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 357 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | SuperFET II FRFET | - | - |
| Packaging | Reel | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FCB110N65F | - | - |
| Width | 9.65 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 5.7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 21 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 89 ns | - | - |
| Typical Turn On Delay Time | 31 ns | - | - |
| Unit Weight | 0.046296 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FCB11N60TM | MOSFET HIGH POWER | |
| FCB110N65F | MOSFET SF2 650V 110MOHM F D2PAK | ||
| FCB1100DB/009 | 全新原装 | ||
| FCB11N60 | MOSFET, N, D2-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:11A, Drain Source Voltage Vds:600V, On Resistance Rds(on):0.32ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage V | ||
| FCB11N60 11N60C3 600V | 全新原装 | ||
| FCB11N60F | 全新原装 | ||
| FCB11N60TM-NL | 全新原装 | ||
| FCB11XS2535040TSNSMD | 全新原装 | ||
ON Semiconductor |
FCB110N65F | MOSFET N-CH 650V 35A D2PAK | |
| FCB11N60FTM | MOSFET N-CH 600V 11A D2PAK | ||
| FCB11N60TM | MOSFET N-CH 600V 11A D2PAK |