FCP190N65 stock, FCP190N65, FCP190N65F


PartNumber	FCP190N65F	FCP190N65S3	FCP190N65S3R0
Description	MOSFET SF2 650V 190MOHM F TO220	MOSFET SuperFET3 650V 190 mOhm, TO220F PKG	MOSFET N-CH 650V 190MOHM TO220 I
Manufacturer	ON Semiconductor	ON Semiconductor	-
Product Category	MOSFET	MOSFET	-
RoHS	Y	Y	-
Technology	Si	Si	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-220-3	TO-220-3	-
Number of Channels	1 Channel	1 Channel	-
Transistor Polarity	N-Channel	N-Channel	-
Vds Drain Source Breakdown Voltage	650 V	650 V	-
Id Continuous Drain Current	20.6 A	17 A	-
Rds On Drain Source Resistance	190 mOhms	159 mOhms	-
Vgs th Gate Source Threshold Voltage	5 V	2.5 V	-
Vgs Gate Source Voltage	20 V	30 V	-
Qg Gate Charge	60 nC	33 nC	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Pd Power Dissipation	208 W	144 W	-
Configuration	Single	Single	-
Channel Mode	Enhancement	Enhancement	-
Tradename	SuperFET II FRFET	-	-
Packaging	Tube	Tube	-
Height	16.3 mm	-	-
Length	10.67 mm	-	-
Series	FCP190N65F	FCP190N65S3	-
Transistor Type	1 N-Channel	1 N-Channel	-
Width	4.7 mm	-	-
Brand	ON Semiconductor / Fairchild	ON Semiconductor	-
Forward Transconductance Min	18 S	10 S	-
Fall Time	4.2 ns	16 ns	-
Product Type	MOSFET	MOSFET	-
Rise Time	11 ns	22 ns	-
Factory Pack Quantity	800	800	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	62 ns	57 ns	-
Typical Turn On Delay Time	25 ns	20 ns	-
Unit Weight	0.063493 oz	0.063493 oz	-

Search Part Number : "FCP190N65", Match & Start with "FCP190N65" - Total : 6

制造商	型号	描述
ON Semiconductor / Fairchild	FCP190N65F	MOSFET SF2 650V 190MOHM F TO220
ON Semiconductor	FCP190N65S3	MOSFET SuperFET3 650V 190 mOhm, TO220F PKG
	FCP190N65F	MOSFET N-CH 650V 20.6A TO220-3
	FCP190N65S3	MOSFET N-CH 650V 17A TO220-3
	FCP190N65S3R0	MOSFET N-CH 650V 190MOHM TO220 I
	FCP190N65	全新原装

FCP190N65