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| PartNumber | FDBL86210-F085 | FDBL86210 | FDBL86210_F085 |
| Description | MOSFET N-Ch Power Trench MOSFET 150V 169A | MOSFET N-Ch Power Trench MOSFET 150V 169A | N-CHANNEL POWER TRENCH MOSFET |
| Manufacturer | ON Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | H-PSOF-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Id Continuous Drain Current | 169 A | - | - |
| Rds On Drain Source Resistance | 5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.8 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 70 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 500 W | - | - |
| Configuration | Single | Single | Single |
| Qualification | AEC-Q101 | - | - |
| Tradename | PowerTrench | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.4 mm | - | - |
| Length | 10.48 mm | - | - |
| Series | FDBL86210_F085 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.9 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 23 ns | 23 ns | 23 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 30 ns | 30 ns | 30 ns |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 70 ns | 70 ns | 70 ns |
| Typical Turn On Delay Time | 39 ns | 39 ns | 39 ns |
| Part # Aliases | FDBL86210_F085 | - | - |
| Unit Weight | 0.029983 oz | 0.029985 oz | 0.029985 oz |
| Package Case | - | MO-299A-8 | MO-299A-8 |
| Pd Power Dissipation | - | 500 W | 500 W |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 169 A | 169 A |
| Vds Drain Source Breakdown Voltage | - | 150 V | 150 V |
| Vgs th Gate Source Threshold Voltage | - | 2.8 V | 2.8 V |
| Rds On Drain Source Resistance | - | 5 mOhms | 5 mOhms |
| Qg Gate Charge | - | 70 nC | 70 nC |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDBL86210-F085 | MOSFET N-Ch Power Trench MOSFET 150V 169A | |
| FDBL86210 | MOSFET N-Ch Power Trench MOSFET 150V 169A | ||
| FDBL86210_F085 | N-CHANNEL POWER TRENCH MOSFET | ||
ON Semiconductor |
FDBL86210-F085 | MOSFET N-CH 150V 169A PSOF8 |