FDN56

FDN5618P vs FDN5614P vs FDN5618P , LTV-357T-A-G

 
PartNumberFDN5618PFDN5614PFDN5618P , LTV-357T-A-G
DescriptionMOSFET SSOT-3 P-CH 60V
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSSOT-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current1.2 A--
Rds On Drain Source Resistance170 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation500 mW (1/2 W)--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel--
Height1.12 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesFDN5618P--
Transistor Type1 P-Channel--
TypeMOSFET--
Width1.4 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min4.3 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time8 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time16.5 ns--
Typical Turn On Delay Time6.5 ns--
Part # AliasesFDN5618P_NL--
Unit Weight0.001058 oz--
制造商 型号 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDN5618P MOSFET SSOT-3 P-CH 60V
FDN5630 MOSFET SSOT-3 N-CH 60V
FDN5632N-F085 MOSFET Trans MOS N-Ch 60V 1.7A
FDN5614P 全新原装
FDN5618P , LTV-357T-A-G 全新原装
FDN5618P-NL 全新原装
FDN5618P-NL , 1N5250BTA 全新原装
FDN5618PDKR-ND 全新原装
FDN5630 , 1N5250BTR 全新原装
FDN5630(5630) 全新原装
FDN5630-NL 全新原装
FDN5630N 全新原装
FDN5630N-NL 全新原装
FDN5630PNL 全新原装
FDN5630_F095 MOSFET GATE OX, 60V, NCH, .120MO (6V), TRENCH
FDN5630_G 全新原装
FDN5632 全新原装
FDN5632-NL 全新原装
FDN5632N MOSFET Trans MOS N-Ch 60V 1.7A - Bulk (Alt: FDN5632N)
FDN5632N-F085 , 1N5251B 全新原装
FDN5632N-NL 全新原装
FDN5632N_F085 NMOS SSOT3 60V 82 MOHM
FDN5618P-CUT TAPE 全新原装
FDN5630-CUT TAPE 全新原装
FDN5632N-F085-CUT TAPE 全新原装
ON Semiconductor
ON Semiconductor
FDN5618P MOSFET P-CH 60V 1.25A SSOT3
FDN5630 MOSFET N-CH 60V 1.7A SSOT3
FDN5632N-F085 MOSFET N-CH 60V 1.7A SSOT3
FDN5618P_G INTEGRATED CIRCUIT
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