 |  | | |
| PartNumber | FDT439N | FDT439 | FDT439N , 1N5261B-TAP |
| Description | MOSFET SOT-223 N-CH 30V | ||
| Manufacturer | ON Semiconductor | FAIRCHI | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-223-4 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 6.3 A | - | - |
| Rds On Drain Source Resistance | 38 mOhms | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 3 W | - | - |
| Configuration | Single | Single Dual Drain | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 1.8 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | FDT439N | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | MOSFET | - | - |
| Width | 3.5 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 17 S | - | - |
| Fall Time | 10 ns | 10 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | 10 ns | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 30 ns | 30 ns | - |
| Typical Turn On Delay Time | 6 ns | 6 ns | - |
| Part # Aliases | FDT439N_NL | - | - |
| Unit Weight | 0.003951 oz | 0.006632 oz | - |
| Part Aliases | - | FDT439N_NL | - |
| Package Case | - | TO-261-4, TO-261AA | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-223-4 | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 1.1W | - |
| Drain to Source Voltage Vdss | - | 30V | - |
| Input Capacitance Ciss Vds | - | 500pF @ 15V | - |
| FET Feature | - | Logic Level Gate, 2.5V Drive | - |
| Current Continuous Drain Id 25°C | - | 6.3A (Ta) | - |
| Rds On Max Id Vgs | - | 45 mOhm @ 6.3A, 4.5V | - |
| Vgs th Max Id | - | 1V @ 250μA | - |
| Gate Charge Qg Vgs | - | 15nC @ 4.5V | - |
| Pd Power Dissipation | - | 3 W | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Id Continuous Drain Current | - | 6.3 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Rds On Drain Source Resistance | - | 38 mOhms | - |
| Forward Transconductance Min | - | 17 S | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDT439N | MOSFET SOT-223 N-CH 30V | |
ON Semiconductor |
FDT439N | MOSFET N-CH 30V 6.3A SOT-223 | |
| FDT439 | 全新原装 | ||
| FDT439N , 1N5261B-TAP | 全新原装 | ||
| FDT439N-NL | 全新原装 | ||
| FDT439N-CUT TAPE | 全新原装 |