 | | |
| PartNumber | FDU6680 | FDU6688 |
| Description | MOSFET 30V N-Channel PowerTrench | MOSFET 30V N-Ch PowerTrench |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | E | E |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 46 A | 84 A |
| Rds On Drain Source Resistance | 10 mOhms | 4 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 3.3 W | 83 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Tube | Tube |
| Height | 16.3 mm | 16.3 mm |
| Length | 10.67 mm | 10.67 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | MOSFET |
| Width | 4.7 mm | 4.7 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 47 S | 88 S |
| Fall Time | 12 ns | 36 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 7 ns | 13 ns |
| Factory Pack Quantity | 75 | 75 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 29 ns | 62 ns |
| Typical Turn On Delay Time | 10 ns | 15 ns |
| Part # Aliases | FDU6680_NL | FDU6688_NL |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDU6680 | MOSFET 30V N-Channel PowerTrench | |
| FDU6688 | MOSFET 30V N-Ch PowerTrench | ||
ON Semiconductor |
FDU6680 | MOSFET N-CH 30V 12A IPAK | |
| FDU6688 | MOSFET N-CH 30V 84A I-PAK | ||
| FDU6680(Q) | 全新原装 | ||
| FDU6680A(Q) | 全新原装 | ||
| FDU6680A-Q | 全新原装 | ||
| FDU6680AS | 全新原装 | ||
| FDU6680FSC | 全新原装 | ||
| FDU6682-NL | 全新原装 | ||
| FDU6688-Q | 全新原装 | ||
| FDU6680A | Power Field-Effect Transistor, 14A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | ||
| FDU6682 | Power Field-Effect Transistor, 75A I(D), 30V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |