 |  |  | |
| PartNumber | FF150R12RT4 | FF150R12RT4HOSA1 | FF150R12RT4 , 1N5357B |
| Description | IGBT Modules IGBT 1200V 150A | IGBT MODULE 1200V 150A | |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | Y | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 1.75 V | - | - |
| Continuous Collector Current at 25 C | 150 A | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Pd Power Dissipation | 790 W | - | - |
| Package / Case | Module | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | SMD/SMT | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FF150R12RT4HOSA1 SP000624908 | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
FF150R12RT4 | IGBT Modules IGBT 1200V 150A | |
| FF150R12RT4HOSA1 | IGBT MODULE 1200V 150A | ||
| FF150R12RT4 | IGBT Modules IGBT 1200V 150A | ||
| FF150R12RT4 , 1N5357B | 全新原装 |