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| PartNumber | FGH60N60SMD-F085 | FGH60N60SMD | FGH60N60SMD_F085 |
| Description | IGBT Transistors 600V/60A Field Stop IGBT Gen 2 | IGBT Transistors 600V/60A Field Stop IGBT ver. 2 | IGBT Transistors 600V/60A Field Stop IGBT Gen 2 |
| Manufacturer | ON Semiconductor | ON Semiconductor | Fairchild Semiconductor |
| Product Category | IGBT Transistors | IGBT Transistors | IGBTs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-247-3 | TO-247 | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
| Collector Emitter Saturation Voltage | 2.14 V | 1.9 V | 2.14 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | +/- 20 V |
| Continuous Collector Current at 25 C | 120 A | 120 A | 120 A |
| Pd Power Dissipation | 600 W | 600 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 175 C |
| Series | FGH60N60SM_F085 | FGH60N60SMD | Automotive, AEC-Q101 |
| Qualification | AEC-Q101 | - | - |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 60 A | - | 60 A |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Gate Emitter Leakage Current | 400 nA | 400 nA | 400 nA |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 450 | 450 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | FGH60N60SMD_F085 | - | - |
| Unit Weight | 0.225401 oz | 0.225401 oz | 0.225401 oz |
| Package Case | - | - | TO-247-3 |
| Input Type | - | - | Standard |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-247-3 |
| Power Max | - | - | 600W |
| Reverse Recovery Time trr | - | - | 42ns |
| Current Collector Ic Max | - | - | 120A |
| Voltage Collector Emitter Breakdown Max | - | - | 600V |
| IGBT Type | - | - | Field Stop |
| Current Collector Pulsed Icm | - | - | 180A |
| Vce on Max Vge Ic | - | - | 2.5V @ 15V, 60A |
| Switching Energy | - | - | 1.59mJ (on), 390μJ (off) |
| Gate Charge | - | - | 280nC |
| Td on off 25°C | - | - | 22ns/116ns |
| Test Condition | - | - | 400V, 60A, 3 Ohm, 15V |
| Pd Power Dissipation | - | - | 600 W |
| Collector Emitter Voltage VCEO Max | - | - | 600 V |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FGH60N60SMD-F085 | IGBT Transistors 600V/60A Field Stop IGBT Gen 2 | |
| FGH60N60SMD | IGBT Transistors 600V/60A Field Stop IGBT ver. 2 | ||
| FGH60N60SMD_F085 | IGBT Transistors 600V/60A Field Stop IGBT Gen 2 | ||
ON Semiconductor |
FGH60N60SMD | IGBT Transistors 600V/60A Field Stop IGBT ver. 2 | |
| FGH60N60SMD-F085 | 600V/60A FIELD STOP IGBT GEN 2 | ||
| FGH60N60SMD. | FSPIGBT TO247 60A 600V ROHS COMPLIANT: YES | ||
| FGH60N60SMD,FGH60N60, | 全新原装 | ||
| FGH60N60SMD,FGH60N60,G60 | 全新原装 | ||
| FGH60N60SMD,FGH60N60SMDT | 全新原装 | ||
| FGH60N60SMDTU | 全新原装 |