FJN4301 stock, FJN4301, FJN4301RTA


PartNumber	FJN4301RTA	FJN4301RBU
Description	Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial	Bipolar Transistors - Pre-Biased 50V/100mA/4.7K 4.7K
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistors - Pre-Biased	Bipolar Transistors - Pre-Biased
RoHS	Y	Y
Configuration	Single	Single
Transistor Polarity	PNP	PNP
Typical Input Resistor	4.7 kOhms	4.7 kOhms
Typical Resistor Ratio	1	1
Mounting Style	Through Hole	Through Hole
Package / Case	TO-92-3 Kinked Lead	TO-92-3
DC Collector/Base Gain hfe Min	20	20
Collector Emitter Voltage VCEO Max	50 V	50 V
Continuous Collector Current	- 0.1 A	- 0.1 A
Peak DC Collector Current	100 mA	100 mA
Pd Power Dissipation	300 mW	300 mW
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Series	FJN4301R	-
Packaging	Ammo Pack	Bulk
DC Current Gain hFE Max	20	20
Emitter Base Voltage VEBO	- 10 V	- 10 V
Height	5.33 mm	5.33 mm
Length	5.2 mm	5.2 mm
Type	PNP Epitaxial Silicon Transistor	PNP Epitaxial Silicon Transistor
Width	4.19 mm	4.19 mm
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Product Type	BJTs - Bipolar Transistors - Pre-Biased	BJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity	2000	1000
Subcategory	Transistors	Transistors
Unit Weight	0.008466 oz	0.006286 oz

Search Part Number : "FJN4301", Match & Start with "FJN4301" - Total : 5

制造商	型号	描述
ON Semiconductor / Fairchild	FJN4301RTA	Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial
ON Semiconductor / Fairchild	FJN4301RBU	Bipolar Transistors - Pre-Biased 50V/100mA/4.7K 4.7K
ON Semiconductor	FJN4301RTA	Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial
ON Semiconductor	FJN4301RBU	TRANS PREBIAS PNP 300MW TO92-3
	FJN4301R	全新原装

FJN4301