FJX3014 stock, FJX3014, FJX3014RTF


PartNumber	FJX3014RTF	FJX3014R	FJX3014RTF , 1N816
Description	Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
Manufacturer	ON Semiconductor	FAIRCHILD	-
Product Category	Bipolar Transistors - Pre-Biased	Transistors (BJT) - Single, Pre-Biased	-
RoHS	Y	-	-
Configuration	Single	Single	-
Transistor Polarity	NPN	NPN	-
Typical Input Resistor	4.7 kOhms	4.7 kOhms	-
Typical Resistor Ratio	0.1	0.1	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	SOT-323-3	-	-
DC Collector/Base Gain hfe Min	68	-	-
Collector Emitter Voltage VCEO Max	50 V	-	-
Continuous Collector Current	0.1 A	0.1 A	-
Peak DC Collector Current	100 mA	100 mA	-
Pd Power Dissipation	200 mW	-	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	FJX3014R	-	-
Packaging	Reel	Reel	-
DC Current Gain hFE Max	68	-	-
Emitter Base Voltage VEBO	10 V	-	-
Height	0.9 mm	-	-
Length	2 mm	-	-
Type	NPN Epitaxial Silicon Transistor	-	-
Width	1.25 mm	-	-
Brand	ON Semiconductor / Fairchild	-	-
Product Type	BJTs - Bipolar Transistors - Pre-Biased	-	-
Factory Pack Quantity	3000	-	-
Subcategory	Transistors	-	-
Unit Weight	0.000176 oz	0.001058 oz	-
Package Case	-	SOT-323-3	-
Pd Power Dissipation	-	0.2 W	-
Collector Emitter Voltage VCEO Max	-	50 V	-
Emitter Base Voltage VEBO	-	10 V	-
DC Collector Base Gain hfe Min	-	68	-

Search Part Number : "FJX3014", Match & Start with "FJX3014" - Total : 5

制造商	型号	描述
ON Semiconductor / Fairchild	FJX3014RTF	Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
ON Semiconductor	FJX3014RTF	Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
	FJX3014RTF_Q	Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
	FJX3014R	全新原装
	FJX3014RTF , 1N816	全新原装

FJX3014