FQB

FQB7N60TM vs FQB7N60TM-WS vs FQB7N30TM

 
PartNumberFQB7N60TMFQB7N60TM-WSFQB7N30TM
DescriptionMOSFET 600V N-Channel QFETMOSFET 600V 7.4A 1Ohm N-ChannelMOSFET 300V N-Channel QFET
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSEYE
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3TO-263-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V300 V
Id Continuous Drain Current7.4 A7.4 A7 A
Rds On Drain Source Resistance1 Ohms1 Ohms700 mOhms
Vgs Gate Source Voltage30 V30 V30 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation3.13 W3.13 W3.13 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
Height4.83 mm4.83 mm4.83 mm
Length10.67 mm10.67 mm10.67 mm
SeriesFQB7N60FQB7N60-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeMOSFET-MOSFET
Width9.65 mm9.65 mm9.65 mm
BrandON Semiconductor / FairchildON Semiconductor / FairchildON Semiconductor / Fairchild
Forward Transconductance Min6.4 S-4.3 S
Fall Time60 ns60 ns35 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time80 ns80 ns75 ns
Factory Pack Quantity800800800
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time65 ns65 ns25 ns
Typical Turn On Delay Time30 ns30 ns13 ns
Unit Weight0.046296 oz-0.011640 oz
Tradename-QFET-
Part # Aliases-FQB7N60TM_WS-
  • 从...开始
  • FQB 525
制造商 型号 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB7P20TM MOSFET 200V P-Channel QFET
FQB7N60TM MOSFET 600V N-Channel QFET
FQB7P20TM-F085 MOSFET 200V P-Channel QFET
FQB7N60TM-WS MOSFET 600V 7.4A 1Ohm N-Channel
FQB7N65CTM MOSFET 650V 7A NCH MOSFET
FQB7N30TM MOSFET 300V N-Channel QFET
FQB8N25TM MOSFET 250V N-Channel QFET
FQB7N30 全新原装
FQB7N30TM-NL 全新原装
FQB7N40 全新原装
FQB7N60 全新原装
FQB7N60M 全新原装
FQB7N60TM-NL 全新原装
FQB7N60Z 全新原装
FQB7N65 全新原装
FQB7N65C 全新原装
FQB7N80 全新原装
FQB7N80 7N80 7A 800V 全新原装
FQB7N80TM Power Field-Effect Transistor, 6.6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
FQB7N80TM-NL 全新原装
FQB7P06 全新原装
FQB7P06TM-NL 全新原装
FQB7P06TMFSC 全新原装
FQB7P20 全新原装
FQB7P20TM-NL 全新原装
FQB8030L 全新原装
FQB8447L 全新原装
FQB85N06 全新原装
FQB85N06TM Power Field-Effect Transistor, 85A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
FQB85N06TM-NL 全新原装
FQB8N25 全新原装
FQB8N25TM-NL 全新原装
FQB8N60 全新原装
FQB8N60C 全新原装
FQB8N60CF 全新原装
FQB7P20TM_F085 IGBT Transistors MOSFET 200V P-Channel QFET
FQB7N60TM_WS RF Bipolar Transistors MOSFET 600V 7.4A 1Ohm N-Channel
FQB7P20TM-F085P - Tape and Reel (Alt: FQB7P20TM-F085P)
ON Semiconductor
ON Semiconductor
FQB7N30TM MOSFET N-CH 300V 7A D2PAK
FQB7N60TM-WS MOSFET N-CH 600V 7.4A D2PAK
FQB7N65CTM MOSFET N-CH 650V 7A D2PAK
FQB7N80TM_AM002 MOSFET N-CH 800V 6.6A D2PAK
FQB7P06TM MOSFET P-CH 60V 7A D2PAK
FQB7P20TM MOSFET P-CH 200V 7.3A D2PAK
FQB85N06TM_AM002 MOSFET N-CH 60V 85A D2PAK
FQB8N25TM MOSFET N-CH 250V 8A D2PAK
FQB7P20TM-F085 MOSFET P-CH 200V 7.3A D2PAK
FQB7N60TM Darlington Transistors MOSFET 600V N-Channel QFET
FQB7N20LTM MOSFET N-CH 200V 6.5A D2PAK
FQB7N20TM MOSFET N-CH 200V 6.6A D2PAK
Top