 | | | |
| PartNumber | FQB6N90 | FQB6N90C | FQB6N90TM |
| Description | Power Field-Effect Transistor, 5.8A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| Manufacturer | - | - | FSC |
| Product Category | - | - | FETs - Single |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
| FQB6N90 | 全新原装 | ||
| FQB6N90C | 全新原装 | ||
| FQB6N90TM | Power Field-Effect Transistor, 5.8A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| FQB6N90TM-NL | 全新原装 | ||
ON Semiconductor |
FQB6N90TM_AM002 | MOSFET N-CH 900V 5.8A D2PAK |