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| PartNumber | FQD10N20LTM | FQD10N20CTM | FQD10N20CTF |
| Description | MOSFET 200V N-Ch QFET Logic Level | MOSFET N-CH/200V/10A/QFET | MOSFET N-CH/200V/10A/QFET |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | 200 V |
| Id Continuous Drain Current | 7.6 A | 7.8 A | 7.8 A |
| Rds On Drain Source Resistance | 290 mOhms | 360 mOhms | 290 mOhms |
| Vgs Gate Source Voltage | 20 V | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2.5 W | 50 W | 50 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 2.39 mm | 2.39 mm | 2.39 mm |
| Length | 6.73 mm | 6.73 mm | 6.73 mm |
| Series | FQD10N20L | FQD10N20C | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | - | MOSFET |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 9.6 S | - | 5.6 S |
| Fall Time | 95 ns | 72 ns | 72 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 150 ns | 92 ns | 92 ns |
| Factory Pack Quantity | 2500 | 2500 | 2000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 50 ns | 70 ns | 70 ns |
| Typical Turn On Delay Time | 13 ns | 11 ns | 11 ns |
| Unit Weight | 0.009184 oz | 0.009184 oz | 0.139332 oz |
| Part # Aliases | - | FQD10N20CTM_NL | FQD10N20CTF_NL |
