 | | |
| PartNumber | FQD6N60CTM-WS | FQD6N60CTM |
| Description | MOSFET 600V N-Ch MOSFET QFET | MOSFET N-CH/600V/6A/ QFET C-Series |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | E |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 4 A | 4.5 A |
| Rds On Drain Source Resistance | 2 Ohms | 1.2 Ohms |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 80 W | 80 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 2.39 mm | 2.39 mm |
| Length | 6.73 mm | 6.73 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Fall Time | 45 ns | 45 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 45 ns | 45 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 45 ns | 45 ns |
| Typical Turn On Delay Time | 15 ns | 15 ns |
| Part # Aliases | FQD6N60CTM_WS | - |
| Unit Weight | 0.009184 oz | 0.139332 oz |
| Type | - | MOSFET |
| Forward Transconductance Min | - | 4.8 S |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQD6N60CTM-WS | MOSFET 600V N-Ch MOSFET QFET | |
| FQD6N60CTM | MOSFET N-CH/600V/6A/ QFET C-Series | ||
ON Semiconductor |
FQD6N60CTM | MOSFET N-CH 600V 4A DPAK | |
| FQD6N60CTM-WS | MOSFET N-CH 600V DPAK | ||
| FQD6N60CTM-NL | 全新原装 | ||
| FQD6N60CTM_WS | MOSFET 600V N-Ch MOSFET QFET |