FQI12N6 stock, FQI12N6, FQI12N60CTU


PartNumber	FQI12N60CTU	FQI12N60TU	FQI12N60C
Description	MOSFET 600V N-Channel Adv Q-FET C-Series	MOSFET
Manufacturer	ON Semiconductor	ON Semiconductor	-
Product Category	MOSFET	MOSFET	-
RoHS	E	Y	-
Technology	Si	Si	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-262-3	TO-262-3	-
Number of Channels	1 Channel	1 Channel	-
Transistor Polarity	N-Channel	N-Channel	-
Vds Drain Source Breakdown Voltage	600 V	600 V	-
Id Continuous Drain Current	12 A	10.5 A	-
Rds On Drain Source Resistance	650 mOhms	700 mOhms	-
Vgs Gate Source Voltage	30 V	30 V	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Pd Power Dissipation	225 W	3.13 W	-
Configuration	Single	Single	-
Channel Mode	Enhancement	Enhancement	-
Packaging	Tube	Tube	-
Height	7.88 mm	7.88 mm	-
Length	10.29 mm	10.29 mm	-
Transistor Type	1 N-Channel	1 N-Channel	-
Type	MOSFET	MOSFET	-
Width	4.83 mm	4.83 mm	-
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild	-
Forward Transconductance Min	13 S	-	-
Fall Time	90 ns	85 ns	-
Product Type	MOSFET	MOSFET	-
Rise Time	85 ns	115 ns	-
Factory Pack Quantity	50	50	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	155 ns	95 ns	-
Typical Turn On Delay Time	30 ns	30 ns	-
Part # Aliases	FQI12N60CTU_NL	-	-
Unit Weight	0.084199 oz	0.054004 oz	-

Search Part Number : "FQI12N6", Match & Start with "FQI12N6" - Total : 5

制造商	型号	描述
ON Semiconductor / Fairchild	FQI12N60CTU	MOSFET 600V N-Channel Adv Q-FET C-Series
ON Semiconductor / Fairchild	FQI12N60TU	MOSFET
	FQI12N60C	全新原装
ON Semiconductor	FQI12N60CTU	MOSFET N-CH 600V 12A I2PAK
ON Semiconductor	FQI12N60TU	MOSFET N-CH 600V 10.5A I2PAK

FQI12N6