 |  | | |
| PartNumber | FQP10N20C | FQP10N20 | FQP10N20CTSTU |
| Description | MOSFET 200V N-Ch MOSFET | MOSFET N-CH 200V 10A TO-220 | MOSFET N-CH 200V 9.5A TO-220 |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 9.5 A | - | - |
| Rds On Drain Source Resistance | 360 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 72 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | QFET | - | - |
| Packaging | Tube | - | - |
| Height | 16.3 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FQP10N20C | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 5.5 S | - | - |
| Fall Time | 72 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 92 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 70 ns | - | - |
| Typical Turn On Delay Time | 11 ns | - | - |
| Unit Weight | 0.063493 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQP10N20C | MOSFET 200V N-Ch MOSFET | |
ON Semiconductor |
FQP10N20 | MOSFET N-CH 200V 10A TO-220 | |
| FQP10N20CTSTU | MOSFET N-CH 200V 9.5A TO-220 | ||
| FQP10N60C | MOSFET N-CH 600V 9.5A TO-220 | ||
| FQP10N20C | MOSFET N-CH 200V 9.5A TO-220 | ||
| FQP10N20,10N20 | 全新原装 | ||
| FQP10N20C , MM3Z5231B | 全新原装 | ||
| FQP10N20C,10N20C, | 全新原装 | ||
| FQP10N20C,FQP10N20 | 全新原装 | ||
| FQP10N20C,FQP6N60C | 全新原装 | ||
| FQP10N20C,P10N20C, | 全新原装 | ||
| FQP10N20C_F080 | 全新原装 | ||
| FQP10N20L | Power Field-Effect Transistor, 10A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| FQP10N50 | 全新原装 | ||
| FQP10N60 | 全新原装 | ||
| FQP10N60C ,10N60C | 全新原装 | ||
| FQP10N60C,FQPF10N60C,FQP | 全新原装 | ||
| FQP10N60C,P10N60C, | 全新原装 | ||
| FQP10N60C/FQPF10N60C | 全新原装 | ||
| FQP10N60CT | 全新原装 | ||
| FQP10N80C | 全新原装 | ||
| FQP10N20C-- | 全新原装 |