 |  | | |
| PartNumber | FQP18N20V2 | FQP18N50 | FQP18N20V2 PV218N20 |
| Description | MOSFET 200V N-Ch adv QFET V2 Series | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 18 A | - | - |
| Rds On Drain Source Resistance | 140 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 123 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 16.3 mm | - | - |
| Length | 10.67 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 11 S | - | - |
| Fall Time | 62 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 133 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 38 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Unit Weight | 0.050717 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQP18N20V2 | MOSFET 200V N-Ch adv QFET V2 Series | |
ON Semiconductor |
FQP18N20V2 | MOSFET N-CH 200V 18A TO-220 | |
| FQP18N50V2 | MOSFET N-CH 500V 18A TO-220 | ||
| FQP18N50 | 全新原装 | ||
| FQP18N508V2 | 全新原装 | ||
| FQP18N50V2 PV2 18N50 | 全新原装 | ||
| FQP18N50V2,FDP18N50,FDP1 | 全新原装 | ||
| FQP18N50V2,FQP18N50 | 全新原装 | ||
| FQP18N50V2,FQP18N50,18N5 | 全新原装 | ||
| FQP18N50V2,FQP18N50,FQP1 | 全新原装 | ||
| FQP18N50V2,FQP18N50,FQP19N10,18N50, | 全新原装 | ||
| FQP18N50V2,FQP18N50,P18N | 全新原装 | ||
| FQP18N20V2 PV218N20 | 全新原装 |