FQP6N80C

FQP6N80C vs FQP6N80C,6N80C, vs FQP6N80C,6N80C,FQP6N80,6

 
PartNumberFQP6N80CFQP6N80C,6N80C,FQP6N80C,6N80C,FQP6N80,6
DescriptionMOSFET 800V N-Ch Q-FET advance C-Series
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current5.5 A--
Rds On Drain Source Resistance2.5 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation158 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameQFET--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
SeriesFQP6N80C--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min5.4 S--
Fall Time44 ns--
Product TypeMOSFET--
Rise Time65 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time47 ns--
Typical Turn On Delay Time26 ns--
Part # AliasesFQP6N80C_NL--
Unit Weight0.063493 oz--
制造商 型号 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQP6N80C MOSFET 800V N-Ch Q-FET advance C-Series
FQP6N80C,6N80C, 全新原装
FQP6N80C,6N80C,FQP6N80,6 全新原装
FQP6N80C,6N80C,FQP6N80,6N80 全新原装
FQP6N80C,6N80C,FQP6N80,6N80, 全新原装
FQP6N80C,FQP8N80C 全新原装
FQP6N80C,FQPF6N80C,6N80C 全新原装
FQP6N80C,FQPF6N80C,6N80C,6N80, 全新原装
FQP6N80C-TU 全新原装
FQP6N80C/FQP12N60C 全新原装
FQP6N80C/FQP4N90C 全新原装
ON Semiconductor
ON Semiconductor
FQP6N80C MOSFET N-CH 800V 5.5A TO-220
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