 |  | | |
| PartNumber | FQP9N25C | FQP9N25 | FQP9N25C PB |
| Description | MOSFET 250V N-Channel Advance Q-FET | Power Field-Effect Transistor, 9.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 250 V | - | - |
| Id Continuous Drain Current | 8.8 A | - | - |
| Rds On Drain Source Resistance | 430 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 74 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 16.3 mm | - | - |
| Length | 10.67 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 7 S | - | - |
| Fall Time | 65 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 85 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 90 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Unit Weight | 0.050717 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQP9N25C | MOSFET 250V N-Channel Advance Q-FET | |
| FQP9N25 | Power Field-Effect Transistor, 9.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| FQP9N25C PB | 全新原装 | ||
| FQP9N25C,9N25, | 全新原装 | ||
| FQP9N25C,9N25C, | 全新原装 | ||
| FQP9N25C,9N25C,9N25 | 全新原装 | ||
ON Semiconductor |
FQP9N25C | MOSFET N-CH 250V 8.8A TO-220 | |
| FQP9N25CTSTU | MOSFET N-CH 250V 8.8A TO-220 |