 |  |  | |
| PartNumber | FQPF10N20C | FQPF10N20 | FQPF10N20C 10N20 F |
| Description | MOSFET 200V N-Ch MOSFET | MOSFET N-CH 200V 6.8A TO-220F | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220FP-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 9.5 A | - | - |
| Rds On Drain Source Resistance | 360 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 38 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | QFET | - | - |
| Packaging | Tube | - | - |
| Height | 16.07 mm | - | - |
| Length | 10.36 mm | - | - |
| Series | FQPF10N20C | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4.9 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 5.5 S | - | - |
| Fall Time | 72 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 92 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 70 ns | - | - |
| Typical Turn On Delay Time | 11 ns | - | - |
| Part # Aliases | FQPF10N20C_NL | - | - |
| Unit Weight | 0.080072 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQPF10N20C | MOSFET 200V N-Ch MOSFET | |
ON Semiconductor |
FQPF10N20 | MOSFET N-CH 200V 6.8A TO-220F | |
| FQPF10N20C | MOSFET N-CH 200V 9.5A TO-220F | ||
| FQPF10N20C 10N20 F | 全新原装 | ||
| FQPF10N20C,10N60N, | 全新原装 | ||
| FQPF10N20C,F10N20C | 全新原装 | ||
| FQPF10N20C,F10N20C, | 全新原装 | ||
| FQPF10N20C,FQP10N20C,FQP | 全新原装 |